Photodetectors are essential optoelectronic devices that convert light into electrical signals, enabling a wide range of applications in imaging, communication, sensing, and security. These devices, also known as photosensors, play a critical role in detecting and analysing optical information across different wavelengths, from ultraviolet (UV) to visible and infrared (IR) light (IOP Nano Futures, (2023)). At our center, we focus on cutting-edge photodetector research, developing high-performance solution-processed and CVD, PLD based photodiodes using advanced materials such as 2D semiconductors, metal oxides, TMDs, and 2D topological insulators (TIs) (J. Mater. Chem. C 12, 5247–5254 (2024)).

Fig 1. (a) energy range of EM spectrum with respective to materials, (b) Schematic Photoanode with MoS2 electrode material, (c) Light matter interaction of passivated MoS2 photodiode and its energy band alignment and quantum efficiency (d) Temporal response of ZnO UV photodetector.

Our work aims to enhance responsivity, detectivity, and response time while enabling next-generation applications in optical communication, biomedical imaging, night vision, and wearable electronics (Optical Materials 134, (2022), 113086). Our team recently intended to fabricate the solution processed and CVD grown MoS₂ near-infrared photodetectors. Specifically, our solution processed SnS photodiode has good external quantum efficiency (27 %) and higher spectral responsivity of 195 mA/W at 1030 nm has been obtained in the NIR region. Its high NIR photodetection has been achieved by liquid phase K+ intercalation between SnS nanosheets. Also, Ag-g-C₃N₄/MWCNT photodetector fabricated and exhibits good response from UV to visible region (i.e 200-600 nm) with low dark current. The spectral response, external quantum efficiency, response time, and recovery time of the fabricated photodetector are 0.9 A/W (534 nm), 151%, 0.31 s and 0.47 s respectively. In another work, the 2D TI n-Bi₂Se₃/p-Si photodiode offers the high photo responsivity of 248 mA/W at 1100 nm, specific detectivity (D*) values beyond 1013 Jones and short rise time (0.74 s) and decay time (0.18 s). With expertise in material engineering, nanofabrication, and optoelectronic device integration, we strive to push the boundaries of photodetector technology for a smarter and more connected world (IEEE Photonics Technology Letters 33, (2021)  (24), 1499-1502).