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Research Scholar

Mr. Praveenkumar P

My research endeavors are centered on metal oxide semiconductor (MOS)-based sensing platforms, with a particular emphasis on molybdenum trioxide (MoO3) a highly promising n-type semiconductor recognized for its superior chemical robustness and surface reactivity. I am actively engaged in the real-time detection of nitrogen dioxide (NO2). In this pursuit, I engineer MoO3 thin films via the Pulsed Laser Deposition (PLD) technique, which affords atomic-level precision in controlling film thickness and uniformity. The objective of my research is to develop room-temperature operable, device-integrated gas sensors that can be seamlessly incorporated into real-time environmental surveillance frameworks.

Research Interest

Layered 2D Metal oxide semiconductors for gas sensing applications; Pulsed Laser Deposition (PLD) of molybdenum trioxide (MoO3) thin films; Design and development of device-based gas sensors; Surface and structural engineering of MoO3 for enhanced NO2 detection; Interface properties and sensor device fabrication.

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